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Modeling and design of a monolithically integrated power converter on SiC

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3 Author(s)
Yu, L.C. ; Rutgers Univ., Piscataway ; Sheng, K. ; Zhao, J.H.

4H-SiC is an attractive material for high temperature, high power density application due to its wide bandgap and high thermal conductivity. Lateral SiC power devices with very lower specific on-resistance has been reported (Y. Zhang et al., 2006). To fully explore its high temperature and high power density potential, not only power devices need to be fabricated on SiC, but also the circuitries for signal generation/processing, gate driver and control (J.S. Chen et al., 1998). This paper presents device modeling and circuit design of a power converter with fully integrated control based on SiC LJFET

Published in:

Semiconductor Device Research Symposium, 2007 International

Date of Conference:

12-14 Dec. 2007