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Interface study of atomic-layer-deposited HfO2/NO-nitrided SiO2 gate dielectric stack on 4H SiC

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6 Author(s)

In this paper, the authors have systematically investigated the integration of ALD high-k dielectrics on SiC substrates. Thin nitrided SiO2 (2nm-4nm)/HfO2 gate dielectric stack is identified to be suitable for future advanced SiC power MOSFET technology.

Published in:

Semiconductor Device Research Symposium, 2007 International

Date of Conference:

12-14 Dec. 2007