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The electrical and physical properties of silicon carbide (SiC) and its ability to form insulating SiO2 layers by thermal oxidation make it a promising material for high power, high-temperature, and high-frequency metal-oxide-semiconductor field effect transistors (MOSFETs). However, the development of 4H-SiC MOSFETs has been hindered by the high-density of interface states (Dit) at the SiO2/4H-SiC interface and a reduced electron mobility of <10cm2/Vs in n-channel inversion layers. Interfacial nitridation via post-oxidation annealing in NO results in the incorporation of about a monolayer of N (~1015cm-2) at or near the interface and reduces Dit near the conduction band-edge of 4H-SiC by almost an order of magnitude, leading to a significantly improved effective channel mobility in n-channel 4H-SiC MOSFETs. While nitridation has been established as the most efficient oxide processing scheme for SiC devices, the N related trap passivation mechanism and the electronic nature of residual traps at nitrided SiO2/4H-SiC interfaces remains unclear. Here we present new insights on the capture and emission properties of interface traps from constant capacitance deep level spectroscopy (CCDLTS) measurements.