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A comparison of 63 MeV proton and 10 keV X-ray radiation effects in 4H-SiC depletion-mode vertical trench JFETs

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8 Author(s)
Jun, B. ; Georgia Inst. of Technol., Atlanta ; Merrett, N. ; Phillips, S. ; Sutton, A.K.
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In this paper we compare 10 keV X-ray and 63 MeV proton radiation effects on 4H-SiC vertical trench JFET power transistors. The schematic cross-section of the 4H-SiC depletion-mode vertical trench JFET was investigated. For a direct comparison, total dose levels were held constant between the two radiation sources. The significant differences in device response for the two different radiation sources, and the isochronal annealing effects on proton-irradiated devices, are presented in this paper.

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Semiconductor Device Research Symposium, 2007 International

Date of Conference:

12-14 Dec. 2007

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