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Interface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayers

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7 Author(s)
Lim, A.E.-J. ; Nat. Univ. of Singapore (NUS), Singapore ; Wei-Wei Fang ; Liu, Fangyue ; Lee, R.
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A quantitative RE-O interface dipole model was presented to explain Ni-FUSI Phim using RE-based interlayers (REIL). The expected strengths of interface RE-O dipole and extracted Phim values show excellent correlation. It further demonstrates that the NiSi Phim on high- k dielectrics can be engineered by the insertion of thin REIL at the high-k/SiO2 interface.

Published in:

Semiconductor Device Research Symposium, 2007 International

Date of Conference:

12-14 Dec. 2007