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Electrical properties of HfO2/InAs MOS capacitors

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5 Author(s)
Dana Wheeler ; Department of Electrical Engineering, University of Notre Dame, USA ; Alan Seabaugh ; Linus Froberg ; Claes Thelander
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In this work, the first investigation of Au/Ti/HfO2/InAs metal-oxide-semiconductor capacitors is reported. The HfO2 is deposited by atomic layer deposition and characterized by current-voltage and capacitance-voltage measurements. The effects of surface treatment, deposition temperature, post-deposition anneal, and film thickness on breakdown field, leakage current, capacitance, and frequency dispersion are studied with the aim of producing HfO2-InAs interfaces suitable for use in InAs-channel MOSFETs.

Published in:

Semiconductor Device Research Symposium, 2007 International

Date of Conference:

12-14 Dec. 2007