By Topic

InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Chang, Y.C. ; Nat. Tsing Hua Univ., Hsinchu ; Huang, M.L. ; Lee, Y.J. ; Lee, K.Y.
more authors

In this paper, there is no surface cleaning and interfacial passivation layer prior to the ALD-HfO2. However, the oxide/InGaAs interface is atomically sharp without the existence of arsenic oxides, strongly indicating self-cleaning of the ALD process. Excellent well-behaved J-EG and C-V characteristics of ALD-HfO2/In0.53Ga0.47As/InP have been demonstrated in this work.

Published in:

Semiconductor Device Research Symposium, 2007 International

Date of Conference:

12-14 Dec. 2007