Skip to Main Content
In this paper, there is no surface cleaning and interfacial passivation layer prior to the ALD-HfO2. However, the oxide/InGaAs interface is atomically sharp without the existence of arsenic oxides, strongly indicating self-cleaning of the ALD process. Excellent well-behaved J-EG and C-V characteristics of ALD-HfO2/In0.53Ga0.47As/InP have been demonstrated in this work.
Date of Conference: 12-14 Dec. 2007