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Large leakage current reduction of silicon oxide and high-K oxides using the phonon-energy-coupling enhancement effect

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3 Author(s)
Zhi Chen ; Univ. of Kentucky, Lexington ; Pangleen Ong ; Samantaray, C.B.

In this abstract, we will present, for the first time, a TEM image of a RTP-processed SiO2 sample to confirm the authenticity of the PECE effect. We will show the key factor that generates the PECE effect and study the leakage current reduction of HfSiON.

Published in:

Semiconductor Device Research Symposium, 2007 International

Date of Conference:

12-14 Dec. 2007