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New bi-directional T-shaped triple gate n-type poly-si TFT by a low-temperature SLS-process for reducing kink effects

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3 Author(s)
Sung-Hwan Choi ; School of Electrical Engineering, Seoul National University, 151-742, Korea ; Hee-Sun Shin ; Min-Koo Han

In this paper, the authors have proposed and fabricated a new bi-directional T-shaped triple-gate structure for reduction of kink current in poly-Si TFTs fabricated by SLS crystallization method. The mobility of TFT parallel channel direction with laser crystallization direction is 169.87cm2/Vs and the mobility of TFT perpendicular channel direction with laser crystallization direction is 64.28cm2/Vs respectively. The different channel structure is used in the proposed device instead of using asymmetric gate channel length, and then the proposed bi-directional T-shaped Triple-gate structure could be fabricated by normal LTPS process without any limitation of device design rules.

Published in:

Semiconductor Device Research Symposium, 2007 International

Date of Conference:

12-14 Dec. 2007