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A Novel Body Effect Reduction Technique to Recessed Channel Transistor Featuring Partially Insulating Layer Under Source and Drain : Application to Sub-50nm DRAM Cell

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14 Author(s)
Jong-Man Park ; Adv. Technol. Dev. Team, Gyeonggi-Do ; Si-Ok Sohn ; Jung-Soo Park ; Sang-Yeon Han
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We have successfully fabricated fully integrated advanced RCAT (Recess Channel Array Transistor) featuring partially insulating oxide layers in bulk Si substrate, named Partially-insulated-RCAT (Pi-RCAT) to suppress body effect of conventional RCAT and improve current drivability in DRAM cell. The Pi-RCAT demonstrated superior characteristics in body effect, subthreshold slope (SW) and higher current drivability with comparable Ion-Ioff characteristics in comparison with conventional RCAT. Furthermore, in the partially-insulated-STI (Pi-STI) of core and peripheral structure formed simultaneously, well isolation characteristic is improved remarkably due to increase of effective isolation path. In this paper, Pi-RCAT is proved to be effective for the scalability and drivability of RCAT, and Pi-STI is suitable for the improvement of chip shrinkage efficiency.

Published in:

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Date of Conference:

10-12 Dec. 2007

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