Skip to Main Content
We have successfully fabricated fully integrated advanced RCAT (Recess Channel Array Transistor) featuring partially insulating oxide layers in bulk Si substrate, named Partially-insulated-RCAT (Pi-RCAT) to suppress body effect of conventional RCAT and improve current drivability in DRAM cell. The Pi-RCAT demonstrated superior characteristics in body effect, subthreshold slope (SW) and higher current drivability with comparable Ion-Ioff characteristics in comparison with conventional RCAT. Furthermore, in the partially-insulated-STI (Pi-STI) of core and peripheral structure formed simultaneously, well isolation characteristic is improved remarkably due to increase of effective isolation path. In this paper, Pi-RCAT is proved to be effective for the scalability and drivability of RCAT, and Pi-STI is suitable for the improvement of chip shrinkage efficiency.