New Self-Aligned Silicon Nanowire Transistors on Bulk Substrate Fabricated by Epi-Free Compatible CMOS Technology: Process Integration, Experimental Characterization of Carrier Transport and Low Frequency noise

A new method to fabricate self-aligned silicon nanowire transistors (SNWTs) has been realized on bulk silicon substrate by fully epi-free compatible CMOS technology. The SNWTs exhibit excellent immunity of short-channel effects (SCEs) and achieve high I
_on
/I
_off
ratio of 2.6times10
⁸
. The transportation characteristics, ballistic efficiency and low frequency noise of SNWTs are investigated for the first time.