By Topic

Exciton generation in suspended carbon nanotube FETs: a computational study

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Siyuranga O. Koswatta ; 465 Northwestern Ave, Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47906, USA ; Vasili Perebeinos ; Mark S. Lundstrom ; Phaedon Avouris

Optical emission in carbon nanotube devices has potential for many technological applications. Electroluminescence in a recently demonstrated carbon nanotube transistor, with a partially suspended geometry, is attributed to excitonic recombination. Here, we report detailed device simulations for this device structure, treating the excitonic and phonon scattering effects on transport. We confirm the localized generation of excitons near the trench-substrate junction, and the bias dependence of emission characteristics. Furthermore, we provide insight into device operation, exploring device optimization schemes; specifically, the effects of the trench depth and of high-k substrate oxides. We observe a moderate increase in emission efficiency for high-aspect ratio trenches, while high-k oxides could lead to significant improvements.

Published in:

2007 IEEE International Electron Devices Meeting

Date of Conference:

10-12 Dec. 2007