Skip to Main Content
We report the demonstration of two distinct approaches to reduce parasitic resistances in MuGFETs with silicon-carbon (Si:C) S/D. First, the addition of dysprosium (Dy) in NiSi:C contacts reduces the electron barrier height by 38% on SiC. Device integration of the Ni(Dy)Si:C contacts provides a 30% reduction in series resistance leading to improved IDsat performance. Second, we also report the first demonstration of pulsed laser annealing (PLA) for MuGFETs with Si:C S/D for enhanced dopant activation, leading to ~50% lower series resistance. High carbon substitutional concentration (above 1.0%) in Si:C can be achieved with PLA for enhanced strain effects.