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Route to Low Parasitic Resistance in MuGFETs with Silicon-Carbon Source/Drain: Integration of Novel Low Barrier Ni(M)Si:C Metal Silicides and Pulsed Laser Annealing

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17 Author(s)
Lee, R.T.-P. ; Nat. Univ. of Singapore, Singapore ; Koh, A.T.-Y. ; Fang-Yue Liu ; Wei-Wei Fang
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We report the demonstration of two distinct approaches to reduce parasitic resistances in MuGFETs with silicon-carbon (Si:C) S/D. First, the addition of dysprosium (Dy) in NiSi:C contacts reduces the electron barrier height by 38% on SiC. Device integration of the Ni(Dy)Si:C contacts provides a 30% reduction in series resistance leading to improved IDsat performance. Second, we also report the first demonstration of pulsed laser annealing (PLA) for MuGFETs with Si:C S/D for enhanced dopant activation, leading to ~50% lower series resistance. High carbon substitutional concentration (above 1.0%) in Si:C can be achieved with PLA for enhanced strain effects.

Published in:

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Date of Conference:

10-12 Dec. 2007