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A new electro-mechanical non-volatile memory (NVM) cell design is proposed and demonstrated for the first time. The fabricated cells operate with relatively low program/erase voltages and large sensing margin. Because only dielectric and metal layers are required, this cell design is suitable for post-CMOS fabrication. As the cell area is reduced, low operating voltages can be maintained by scaling the vertical dimensions of the cell. Nanometer-scale electro-mechanical memory technology is therefore attractive for high-density embedded memory applications.