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Compact Nano-Electro-Mechanical Non-Volatile Memory (NEMory) for 3D Integration

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5 Author(s)
Woo Young Choi ; Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720 USA. Tel.: +1-510-643-2558, Fax: +1-510-643-2636, E-mail: wychoi@eecs.berkeley.edu ; Hei Kam ; Donovan Lee ; Joanna Lai
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A new electro-mechanical non-volatile memory (NVM) cell design is proposed and demonstrated for the first time. The fabricated cells operate with relatively low program/erase voltages and large sensing margin. Because only dielectric and metal layers are required, this cell design is suitable for post-CMOS fabrication. As the cell area is reduced, low operating voltages can be maintained by scaling the vertical dimensions of the cell. Nanometer-scale electro-mechanical memory technology is therefore attractive for high-density embedded memory applications.

Published in:

2007 IEEE International Electron Devices Meeting

Date of Conference:

10-12 Dec. 2007