Referenced Items are not available for this document.
A compact model for multi-gate MOSFETs with two independently-biased gates is presented. The core model is verified against TCAD simulations without the use of any fitting parameters. Real device effects such as short channel effects and body doping effects are captured. The use of the model is demonstrated through two simulation examples: (1) Back-gate dynamic feedback of FinFET SRAM cells and (2) Tuning of device variations through back gate biasing.
Published in:
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Date of Conference: 10-12 Dec. 2007
- Page(s):
- 565 - 568
- E-ISBN :
- 978-1-4244-1508-3
- Print ISBN:
- 978-1-4244-1507-6
- INSPEC Accession Number:
- 9829162
- Conference Location :
- Washington, DC
- Digital Object Identifier :
- 10.1109/IEDM.2007.4419001
- Product Type:
- Conference Publications
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