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Feasible Integration Scheme for Dual Work Function FUSI/HfSiON Gate Stacks with Selective Metal Pile-up to nMOSFET

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9 Author(s)
Tsuchiya, Y. ; Corp. R&D Center, Toshiba ; Yoshiki, M. ; Kaneko, A. ; Inumiya, S.
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We propose a feasible integration scheme for dual FUSI/HfSiON CMOS with low work function metal pile-up to nMOSFET. A newly developed post phase change process to Ni3Si and composition-dependent diffusivity of Al realize simplified integration of 4.3 eV/4.8 eV. Moreover, direct WF lowering of Pt2Si with metal pile-up realizes 4.3 eV/4.9 eV.

Published in:
Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Date of Conference: 10-12 Dec. 2007

Page(s):
519 - 522
E-ISBN :
978-1-4244-1508-3
Print ISBN:
978-1-4244-1507-6
INSPEC Accession Number:
9829151
Conference Location :
Washington, DC
Digital Object Identifier :
10.1109/IEDM.2007.4418989
Product Type:
Conference Publications

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