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We propose a feasible integration scheme for dual FUSI/HfSiON CMOS with low work function metal pile-up to nMOSFET. A newly developed post phase change process to Ni3Si and composition-dependent diffusivity of Al realize simplified integration of 4.3 eV/4.8 eV. Moreover, direct WF lowering of Pt2Si with metal pile-up realizes 4.3 eV/4.9 eV.
Date of Conference: 10-12 Dec. 2007