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Comprehensive Study of VFB Shift in High-k CMOS - Dipole Formation, Fermi-level Pinning and Oxygen Vacancy Effect

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11 Author(s)

We have quantitatively investigated effective work function (Phim,eff) shift, and experimentally demonstrated that high-k/SiO2 dipole and Si-based gate/high-k contribution are critically important for understanding anomalous VFB shift. Furthermore, we have also found that annealing of metal/high-k gate stack in the reduction ambient induces another dipole formation at the high-k/Si02 interface. Finally, by using the AI2O3 and Y2O3 layer as a bottom high-k, the symmetric VTH CMOS is successfully achieved with a single metal gate electrode.

Published in:

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Date of Conference:

10-12 Dec. 2007