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Mechanism of Vfb roll-off with High Work function Metal Gate and Low Temperature Oxygen Incorporation to Achieve PMOS Band Edge Work function

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10 Author(s)

Vfb roll-off phenomena in high work function (WF) metal gate on high-k is successfully explained by progressive oxygen vacancy (Vo +) generation in high-k as bottom oxide scales. Based on this understanding, low temperature O incorporation (LTOI) process has been developed, which reduces PMOS Vt significantly by enriching high-k with O without increasing equivalent oxide thickness (EOT).

Published in:

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Date of Conference:

10-12 Dec. 2007