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Extreme high-performance n- and pFETs are achieved as 1300 and 1000 uA/um at Ioff = 100 nA/um and Vdd = 1.0 V, respectively, by applying newly proposed booster technologies. The combination of top-cut dual-stress liners and damascene gate remarkably enhances channel stress especially for shorter gate lengths. High-Ion pFETs with compressive stress liners and embedded SiGe source/drain are performed by using ALD-TiN/HfO2 damascene gate stacks with Tinv = 1.4 nm on (100) substrates. On the other hand, nFETs with tensile stress liners are obtained by using HfSix/HfO2 damascene gate stacks with Tinv =1.4 nm.
Date of Conference: 10-12 Dec. 2007