Skip to Main Content
In this paper we investigate the mobility enhancement due to strain in bended NW MOSFETs. Stress of 200 MPa to 2 GPa, induced by thermal oxidation, is measured in suspended NW FETs by Raman spectroscopy. Mobility enhancement of more than 100% is observed. Performance gain of bended compared to non-bended structures is most pronounced in low field conditions and at low temperatures.