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Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress

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9 Author(s)
Moselund, K.E. ; Ecole Polytech. Fed. de Lausanne, Lausanne ; Dobrosz, P. ; Olsen, S. ; Pott, V.
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In this paper we investigate the mobility enhancement due to strain in bended NW MOSFETs. Stress of 200 MPa to 2 GPa, induced by thermal oxidation, is measured in suspended NW FETs by Raman spectroscopy. Mobility enhancement of more than 100% is observed. Performance gain of bended compared to non-bended structures is most pronounced in low field conditions and at low temperatures.

Published in:
Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Date of Conference: 10-12 Dec. 2007

Page(s):
191 - 194
E-ISBN :
978-1-4244-1508-3
Print ISBN:
978-1-4244-1507-6
INSPEC Accession Number:
9829076
Conference Location :
Washington, DC
Digital Object Identifier :
10.1109/IEDM.2007.4418899
Product Type:
Conference Publications

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