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Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress

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9 Author(s)
K. E. Moselund ; Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland. Email: kirsten.moselund@epfl.ch, Telephone: +41-21-6935660, Fax: +41-21-6933640 ; P. Dobrosz ; S. Olsen ; V. Pott
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In this paper we investigate the mobility enhancement due to strain in bended NW MOSFETs. Stress of 200 MPa to 2 GPa, induced by thermal oxidation, is measured in suspended NW FETs by Raman spectroscopy. Mobility enhancement of more than 100% is observed. Performance gain of bended compared to non-bended structures is most pronounced in low field conditions and at low temperatures.

Published in:

2007 IEEE International Electron Devices Meeting

Date of Conference:

10-12 Dec. 2007