Scheduled System Maintenance:
On May 6th, system maintenance will take place from 8:00 AM - 12:00 PM ET (12:00 - 16:00 UTC). During this time, there may be intermittent impact on performance. We apologize for the inconvenience.
By Topic

A New Liner Stressor with Very High Intrinsic Stress (≫ 6 GPa) and Low Permittivity Comprising Diamond-Like Carbon (DLC) for Strained P-Channel Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Kian-Ming Tan ; Nat. Univ. of Singapore (NUS), Singapore ; Ming Zhu ; Wei-Wei Fang ; Yang, Mingchu
more authors

We report a new liner stressor comprising a diamond-like carbon (DLC) layer with very high intrinsic stress for boosting the performance of p-channel transistors. A record-high intrinsic compressive stress of more than 6 GPa is demonstrated, well exceeding values currently achievable with the conventional SiN contact etch-stop layer (CESL). Two major advantages of the DLC layer are lower permittivity and significantly higher compressive stress, therefore enabling further pitch and density scaling with less performance compromise. We integrated the DLC liner stressor with nanoscale SOI p-FETs, demonstrating significant drive current ID,sat enhancement of up to 58% over control devices without liner stressor.

Published in:

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Date of Conference:

10-12 Dec. 2007