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A new method to program and erase NAND devices without using high voltage Fowler-Nordheim (FN) stressing is investigated. Impact Ionization generated substrate Hot Electron (IIHE) and Band to Band tunneling Hot Hole (BBHH) are proposed for SONOS-type NAND flash memory application. Both junctions are biased with the same voltage to perform double-side-charge-injection without lateral electrical field induced current. A novel divided bit line architecture is introduced to achieve this operation. Fast program and erase speed of < 100mus is achieved. Good 10 K cycling endurance and high temperature data retention are demonstrated. IIHE/BBHH for floating gate memory and body-tied FinFET-type SONOS are also demonstrated.
Date of Conference: 10-12 Dec. 2007