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A novel ZrO2/Si3N4 dual charge storage layer (DCSL) has been proposed for highly reliable multi-level cell (MLC) application. Separated charge storage and step-up potential well have been resulted from the ZrO2/Si3N4 DCSL. Threshold voltage (Vth) levels are controlled by the charge storage capacity of each CSL, instead of the amount of charge injection, making a superior multi-level Vth control possible. Negligible Vth, offsets (<0.2V) are maintained throughout the 105 programming/erasing (P/E) cycles, demonstrating a significantly improved endurance reliability compared to NROM-type MLC.