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We examine and demonstrate the benefit of high k and metal gate on Si(110) orientation-only CMOS devices and demonstrate not only good PMOS but competitive NMOS device performance. It is shown that high k / metal gates on NMOS Si(110) surface have higher than expected performance due to velocity saturation of minority carriers. Improvement in source/drain extension results in nearly symmetric CMOS output characteristics with no stress enhancement. Examining potential circuit impact reveals that the Si(110) surface provides a significant improvement in performance for UP and LSTP without large process complexity associated with mixed orientation CMOS approaches.