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Materials Science-based Device Performance Engineering for Metal Gate High-k CMOS

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8 Author(s)

Advanced CMOS engineering strongly requires materials science-based technology in addition to (rather than) demonstrating exotic non-planar device structures and/or various smart integration techniques. This paper describes typical examples of materials-related device engineering in metal gate/high-k CMOS developments, focusing on basic issues such as EOT scalability with higher-k, an inversion layer mobility degradation mechanism and the VTH tuning principle. These considerations will be key to designing high performance CMOS.

Published in:

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Date of Conference:

10-12 Dec. 2007