Skip to Main Content
We have developed a novel e-fuse technology utilizing a Cu-via for the first time. Due to its unique structure and crack-assisted mechanism, void formation locations can be effectively confined to the via-metal interface, enabling highly stable operation as well as a large on-off ratio of 7 orders of magnitude. We have confirmed a sub-10 ppm initial-failure rate and a sub-20 ppm failure rate after thermal stability test equivalent to the thermal stress during the practical packaging process. We believe that this technology is indispensable for the 32 nm technology node and beyond, where metal material is commonly used as a poly-gate, rendering it unsuitable for fuse devices.