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1.2 kV Rectifiers Thermal Behaviour: comparison between Si PiN, 4H-SiC Schottky and JBS diodes

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6 Author(s)
Brosselard, P. ; Campus Univ. Autonoma de Barcelona, Barcelona ; Jorda, X. ; Vellvehi, M. ; Perez-Tomas, A.
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A comparison between electrical characteristics of 1.2 kV Si-PiN and 4H-SiC Schottky/JBS rectifiers is presented. The 4H-SiC rectifiers are characterised in the 25degC-300degC range while the Si-PiN is tested up to 200degC due to the Si temperature limitation 4H-SiC rectifiers exhibit superior temperature performances and their design can be adapted to a specific applications.

Published in:

Power Electronics and Applications, 2007 European Conference on

Date of Conference:

2-5 Sept. 2007