By Topic

Working Temperature Characterizations for Die Attach Films in Stacked-die Process

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Tsung-Yueh Tsai ; Advanced Semiconductor Engineering, Inc., 26 Chin 3rd Rd., Nantze Export Processing Zone, 811 Nantze, Kaohsiung, Taiwan. Tel: +886-7-3617131 ext. 15285; Fax: +886-7-3613094 ; Hsiao-Chuan Chang ; Wei-Chung Li ; Chi-Ping Teng
more authors

Following the strong demand of high-performance and miniaturized electronic devices with reduced process cycle time, the die attach film (DAF) has become a popular option for the die attach process of stacked-die packages in the semiconductor assembly industry. The working temperature of a die attach process is crucial to assembly yield and package reliability. However, as the number of die stacks increases, the die attach process with DAF may encounter a technical bottleneck since the working area is gradually away from the heat source. In this study, the thermal effect from bottom heating of plural-die-stack structures was investigated through transient thermal analysis as well as temperature measurements in an actual stacked-die process. It is clear from numerical and experimental results that as the number of dies in the die-stack structure increases, the time required to reach a working temperature for DAF increases significantly.

Published in:

Electronic Manufacturing Technology Symposium, 2007. IEMT '07. 32nd IEEE/CPMT International

Date of Conference:

3-5 Oct. 2007