By Topic

Precisely calibrated coaxial-to-microstrip transitions yield improved performance in GaAs FET characterization

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Kompa, G. ; Dept. of High Frequency Eng., Kassel Univ., West Germany ; Schlechtweg, M. ; van Raay, F.

An approach for calibrating coaxial-to-microstrip transitions up to 26.5 GHz with high precision is presented. An ideal through, noncritical open, noncritical short and surface absorber are used as microstrip standards for the calibration. The calibration measurement and an approach for extracting the scattering parameters of the transitions are described. Error-corrected results on broadband measurements of the scattering coefficients of packaged FETs in a hybrid circuit configuration are given

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:38 ,  Issue: 1 )