Precisely calibrated coaxial-to-microstrip transitions yield improved performance in GaAs FET characterization

An approach for calibrating coaxial-to-microstrip transitions up to 26.5 GHz with high precision is presented. An ideal through, noncritical open, noncritical short and surface absorber are used as microstrip standards for the calibration. The calibration measurement and an approach for extracting the scattering parameters of the transitions are described. Error-corrected results on broadband measurements of the scattering coefficients of packaged FETs in a hybrid circuit configuration are given.<
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