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T1 Design of integrated RF front-ends in submicron and deep submicron CMOS technologies

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1 Author(s)
Long, J. ; Tech. Univ. Delft, Delft

Summary form only given. The design of front-end electronics in CMOS technology are described in this presentation. Both low-voltage/low-power and high performance aspects of front-ends for highly-integrated radio transceivers are treated, using low-noise amplifier, power amplifier driver, mixer and voltage-controlled oscillator blocks as examples. In addition, the limitations and advantages of on-chip passive components in RF circuits, which are important to low-voltage circuits suitable for integration in advanced CMOS technologies, are included. Single-chip narrowband (e.g., Bluetooth, 802.11x), ultrawideband/broadband and multi-standard transceiver applications will be highlighted.

Published in:

ASIC, 2007. ASICON '07. 7th International Conference on

Date of Conference:

22-25 Oct. 2007