By Topic

Time Domain Measurement of Voltage Rise Time and Current Rise Time Due to Low Voltage ESD using 12GHz Experimental System

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kawamata, K. ; Hachinohe Inst. of Technol., Aomori ; Taka, Y. ; Minegishi, S. ; Haga, A.
more authors

Voltage rise time and current rise time due to small gap discharge as the low voltage ESD was investigated in time domain. The measurement system was improved on the band width from 6 GHz to 12 GHz using the coaxial electrode system. Also, the sensing system was changed from the coupled transmission lines to an E-field sensor and a H-field sensor. The insertion loss of the experimental system was within about -3 dB in frequency range below 12 GHz. As a consequence of the experiment using the system, voltage and current rise time of transition duration were shown 32 ps or less. The rise times were changed in configuration of electrodes, source polarity and discharging voltage. Besides, breakdown field was examined to corroborate the very fast transition durations of about 32 ps. The breakdown field was very high of about 8times10 V/m in low voltage discharging of below 330 V.

Published in:

Electromagnetic Compatibility, 2007. EMC 2007. International Symposium on

Date of Conference:

23-26 Oct. 2007