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A monolithic 60 GHz diode mixer and IF amplifier in compatible technology

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7 Author(s)
Adelseck, B. ; Telefunken Systemtech., Ulm, West Germany ; Colquhoun, A. ; Dieudonne, J.-M. ; Ebert, G.
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A technology is described which allows the monolithic integration of millimeter-wave Schottky diodes and MESFETs on one chip. The Schottky diodes have a cutoff frequency fT of 2300 GHz. A monolithic 60-GHz mixer chip using these diodes shows a conversion loss of 6 dB and a noise figure (DSB) of 3.3 dB. The MESFETs have an f max up to 70 GHz. A two-stage IF amplifier realized with this technology shows a gain of 20.6 dB and a noise figure of 1.7 dB at 4 GHz

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:37 ,  Issue: 12 )