Referenced Items are not available for this document.
A MIMIC-(millimeter wave monolithic integrated circuit) compatible transferred electron oscillator is investigated which utilizes the frequency-independent negative resistance of the stationary charge dipole domain that forms in the channel of a MESFET. The device structure, analysis, and simulation are described. Devices fabricated from GaAs and InP exhibit very high power levels of 56 mW at 29 GHz and 55 mW at 34 GHz, respectively. Continuous wave power levels are somewhat lower (30 mW)
Published in:
Microwave Theory and Techniques, IEEE Transactions on
(Volume:37
,
Issue:
12
)
Date of Publication: Dec 1989
- Page(s):
- 2093 - 2098
- ISSN :
- 0018-9480
- INSPEC Accession Number:
- 3606181
- Digital Object Identifier :
- 10.1109/22.44127
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec 1989
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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