By Topic

Ultra-low-noise millimeter-wave pseudomorphic HEMTs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
R. E. Lee ; Linear Monolithics Inc., West Lake Village, CA, USA ; R. S. Beaubien ; R. H. Norton ; J. W. Bacon

Pseudomorphic high-electron-mobility transistors (PHEMTs) with gate lengths of 0.1 μm and based on the AlGaAs-InGaAs-GaAs material system are presented. The room-temperature device noise figure at 43 GHz is measured to be 1.32 dB (noise temperature=103 K) with 6.7 dB associated gain; when the device is cooled to 17 K, the noise figure falls to 0.36 dB (noise temperature=25 K) with 6.9 dB of associated gain. These pseudomorphic devices also show improved sensitivity to input noise match (N=0.13 at 43 GHz) compared with conventional HEMTs and MESFETs. These PHEMT devices have the lowest noise temperature and noise sensitivity (normalized to frequency) reported to date

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:37 ,  Issue: 12 )