Referenced Items are not available for this document.
A quasi-static, large-signal MESFET circuit model is presented. It is based on a comprehensive quasi-two-dimensional, semiclassical, physical device simulation, and its unique formulation and efficiency make it suitable for the computer-aided design of nonlinear MESFET subsystems. Using this approach the semiconductor equations are reduced to a consistent one-dimensional approximation requiring substantially less computing resources than a full two-dimensional simulation. CPU time is typically reduced by a factor of 1000. A single/two-tone harmonic balance analysis procedure which uses the describing frequency concept is also developed and combined with the MESFET model. Numerical load-pull contours as well as intermodulation distortion contours have been simulated; their comparison with measured results validates the approach taken
Published in:
Microwave Theory and Techniques, IEEE Transactions on
(Volume:37
,
Issue:
12
)
Date of Publication: Dec 1989
- Page(s):
- 2039 - 2045
- ISSN :
- 0018-9480
- INSPEC Accession Number:
- 3606173
- Digital Object Identifier :
- 10.1109/22.44119
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec 1989
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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