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Low-Power SRAMs in Nanoscale CMOS Technologies

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3 Author(s)
Zhang, K. ; Intel Corp., Hillsboro ; Hamzaoglu, F. ; Yih Wang

As CMOS technology scaling is advancing beyond 100 nm, it has become increasingly difficult to meet the power and performance goals for various product applications while achieving aggressive area scaling in static random access memory (SRAM) development. This paper addresses many of the most pressing challenges in today's SRAM design from perspectives of both process technology optimization and design innovation. Key process tradeoff and optimization along with the advanced circuit design techniques for power management and low-voltage operation are discussed.

Published in:

Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 1 )

Date of Publication:

Jan. 2008

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