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Characterization of Short-Wavelength-Selective a-Si:H MSM Photoconductors for Large-Area Digital-Imaging Applications

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3 Author(s)
Farhad Taghibakhsh ; Univ. of Waterloo, Waterloo ; Ida Khodami ; Karim S. Karim

Photoconductor-type photodetectors are attractive as sensors due to their compatibility with thin-film-transistor (TFT) fabrication processes. Since they exhibit photogain, photoconductor detectors have better or comparable responsivity and quantum efficiency (QE) compared to p-i-n photodiodes. In this paper, the operation of metal-semiconductor-metal photoconductor-based photodetectors using aluminum electrodes and thin hydrogenated amorphous-silicon (a-Si) films is investigated. The experimental results of photocurrent measurements, as well as the responsivity and QE for different a-Si film thicknesses, bias voltages, and electrode gaps, are presented. Integration with TFT fabrication and its application in large-area digital imaging are discussed.

Published in:

IEEE Transactions on Electron Devices  (Volume:55 ,  Issue: 1 )