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Low-Noise Avalanche Photodiode in Standard 0.35-μm CMOS Technology

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4 Author(s)

In this paper, we report on an avalanche photodiode (APD) fabricated in a standard 0.35-mum CMOS technology. The main electrooptical characteristics of the device are presented, showing a remarkably low-noise factor if compared to other CMOS APDs. An estimation of the noise properties of a pixel based on the proposed photodiode with charge-amplifier readout is performed, showing that it could have an improved noise performance with respect to a standard photodiode-based pixel.

Published in:

Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 1 )

Date of Publication:

Jan. 2008

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