By Topic

Variable-Body-Factor SOI MOSFET With Ultrathin Buried Oxide for Adaptive Threshold Voltage and Leakage Control

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)

This paper describes a new device concept [a variable-body-factor fully depleted silicon-on-insulator (SOI) MOSFET], where the body factor is modulated by the substrate bias. The buried oxide in the SOI substrate is extremely thin. The operation principle, simulation result, measurement data of dc characteristics, and measurement data of ring oscillators are described, and the low-power/high-speed characteristics of this new device concept is discussed. It is also shown that the device concept is applicable to multiple-gate structures such as a FinFET.

Published in:

IEEE Transactions on Electron Devices  (Volume:55 ,  Issue: 1 )