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The design and fabrication of a monolithically integrated dual-wavelength tunable photodetector are reported. The dual-wavelength character is realized by fabricating a taper substrate. The photodetector, operating at a long wavelength, is monolithically integrated by using a heteroepitaxy growth of InP-In0.53Ga0.47As-InP p-i-n structure on a GaAs-based GaAs/ AlAs Fabry-Perot-filter structure, which can be tuned via the thermal-optic effect. High-quality heteroepitaxy was realized by employing a thin low-temperature buffer layer. The integrated device with a dual-peak distance of 7 nm (1530, 1537 nm), a wavelength-tuning range of 5.0 nm, and a 3-dB bandwidth of 5.9 GHz was demonstrated, agreeing with the theoretical simulation.