Referenced Items are not available for this document.
A novel and low-cost spacer removal technique proved successful in further enhancing the IDsat performance of already strained n-channel trigate FinFETs with SiC source and drain (S/D) stressors. This extra enhancement is attributed to increased longitudinal tensile channel stress as a result of increased stress coupling efficiency from the SiC S/D stressors to the channel. The electrical results also establish that this extra enhancement will become even more significant as physical gate lengths are scaled down.
Published in:
Electron Device Letters, IEEE
(Volume:29
,
Issue:
1
)
Date of Publication: Jan. 2008
- Page(s):
- 80 - 82
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 9747429
- Digital Object Identifier :
- 10.1109/LED.2007.910779
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 26 December 2007
- Issue Date :
- Jan. 2008
- Sponsored by :
- IEEE Electron Devices Society
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