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Correlation of Current Noise Behavior and Dark Spot Formation in Organic Light-Emitting Diodes

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5 Author(s)
Ke, Lin ; Inst. of Mater. Res. & Eng., Singapore ; Kumar, R.S. ; Vijila, Chellappan ; Chua, Soo Jin
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A correlation between current 1/f noise and dark spot formation is reported. Our results show that the dark spot is primarily correlated to current 1/f noise slope; the higher the slope, the poorer the interface, and the more abnormal dark spot growth rate and the shorter lifetime. Besides, there is a correlation between current 1/f noise magnitude and the dark spot initial size. A higher 1/f noise magnitude generally indicates a larger dark spot initial size. A seemingly identical current-voltage curve does not render the same characteristics of dark spot formation, which can be clearly distinguished from the subtle difference in 1/f noise behavior. The noise measurement can be used to predicate device lifetime and degradation behavior.

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Electron Device Letters, IEEE  (Volume:29 ,  Issue: 1 )