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A 6-GHz Low-Power BiCMOS SiGe:C 0.25 μ m Direct Digital Synthesizer

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5 Author(s)
Thuries, S. ; Paul Sabatier Univ., Toulouse ; Tournier, E. ; Cathelin, A. ; Godet, S.
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A 6-GHz low power SiGe direct digital synthesizer (DDS) is reported. This letter discusses the BiCMOS design improvements used for the phase accumulator and the phase-to-amplitude conversion in order to achieve higher speed operation and lower power consumption compared to existing DDS. The phase accumulator is based on a three-level BiCMOS logic, and the phase-to-amplitude conversion is completed through a bipolar differential pair. The circuit has been processed in a BiCMOS SiGe:C 0.25 mum technology. The power consumption is 308 mW and it operates from a 2.8 V supply. The chip core area is 1 mm2.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:18 ,  Issue: 1 )

Date of Publication:

Jan. 2008

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