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High-Efficiency Class-F GaN HEMT Amplifier With Simple Parasitic-Compensation Circuit

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3 Author(s)
Yong-Sub Lee ; Pohang Univ. of Sci. & Technol., Gyungbuk ; Mun-Woo Lee ; Yoon-Ha Jeong

This letter presents a highly efficient class-F power amplifier (PA) using a GaN high electron mobility transistor, which is designed at WCDMA band of 2.14 GHz. The simple and effective compensation circuit consisting of a series capacitor and a shunt inductor is used to compensate for the internal parasitic components of the packaged transistor. Also, the composite right/left-handed transmission lines are used as the harmonic tuner of the class-F PA. From the measured results for a continuous wave, the drain efficiency and power-added efficiency of 75.4% and 70.9% with a gain of 12.2 dB are achieved at an output power of 40.2 dBm.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:18 ,  Issue: 1 )

Date of Publication:

Jan. 2008

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