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We present new compact modeling techniques which have been applied for different types of multiple-gate MOSFETs: double-gate MOSFETs, gate all around MOSFETs and FinFETs. Long channel models are obtained by deriving a unified charge control model from the solution the 1-D Poisson's equation (considering volume inversion), and using it in an adequate transport model. The final channel current, charge and capacitance models are written in terms of the charge sheet densities at the source and drain ends of the channel. The short-channel effects can be easily incorporated to this unified model. Analytical and scalable models for the subthreshold swing, threshold voltage roll-off and DIBL have been developed by solving the 2-D or 3-D Poisson equation using appropriate techniques; these models are also based on a physical analysis of the conduction path. We observed a very good agreement with 2-D and 3-D numerical simulations of the characteristics of the different multiple-gate devices. Finally, using the active transmission line approach, we extended our compact models to the high frequency operation, in order to study the RF performance, including noise.