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We propose a flex-pass-gate SRAM (Flex-PG SRAM), i.e., a FinFET-based SRAM to enhance both the read and write static noise margins (SNMs) independently. The flip-flop in the Flex-PG SRAM consists of usual FinFETs while its pass gates consist of double-"independent"-gate FinFETs, four-terminal-FinFETs. A TCAD simulation revealed that the Flex-PG SRAM increases the read SNM by 70 mV even when its 6-sigma tolerance is ensured, without the cell size penalty and decrease in the write SNM.
Date of Conference: 16-19 Sept. 2007