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Flex-Pass-Gate SRAM Design for Static Noise Margin Enhancement Using FinFET-Based Technology

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9 Author(s)
O'uchi, S. ; Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba ; Masahara, M. ; Sakamoto, K. ; Endo, K.
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We propose a flex-pass-gate SRAM (Flex-PG SRAM), i.e., a FinFET-based SRAM to enhance both the read and write static noise margins (SNMs) independently. The flip-flop in the Flex-PG SRAM consists of usual FinFETs while its pass gates consist of double-"independent"-gate FinFETs, four-terminal-FinFETs. A TCAD simulation revealed that the Flex-PG SRAM increases the read SNM by 70 mV even when its 6-sigma tolerance is ensured, without the cell size penalty and decrease in the write SNM.

Published in:

Custom Integrated Circuits Conference, 2007. CICC '07. IEEE

Date of Conference:

16-19 Sept. 2007