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High quality toroid and solenoid inductors, exhibiting quality factors as high as 87 at 14.5 GHz and 35 at 6.4 GHz are presented in this paper. The inductors are fabricated using only two plating steps which reduces the complexity of the fabrication. The process lowers the number of ohmic contacts between the electroplated layers improving the performance of the device. The fabrication process is low-temperature and fully compatible with CMOS technology which makes it suitable for post-IC processing.