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A Fully Integrated and High Linearity UWB LNA Implemented with Current-Reused Technique and Using Single-Biasing Voltage

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3 Author(s)
Chin-Lung Yang ; Department of Electronics Engineering, Chang Gung University, No. 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan, 333, R. O. C. Tel: 886-3-2118800 Ext. 5787, Fax: 886-3-3272821 ; Wei-Lin Hsieh ; Yi-Chyun Chiang

A fully integrated ultra-wideband (UWB) low-noise amplifier (LNA) operating in the 7.2-9.1 GHz frequency range is presented. The LNA is constructed in self-biased and current-reused configuration to eliminate the external supply voltage applied in gate to decrease the complexity of bias circuitry. A shunt-shunt feedback network is not only used to archive self-biased architecture and neutralize the miller effect, but also increase the linearity and bandwidth of the amplifier. A prototype was designed and fabricated in a TSMC 0.18-mum technology to demonstrate the proposed LNA circuit. The measurements of the prototype show the performances in the design band about 10 dB power gain, 3.9 dB noise figure, 2-dBm input-referred third-order intercept point (IIP3) and drawing 9 mA from a 1.8 V power supply.

Published in:

Wireless Technologies, 2007 European Conference on

Date of Conference:

8-10 Oct. 2007