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A 25-GHz, 40-mW Fully-Integrated Power Amplifier in Standard 90-nm Si-CMOS Technology

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5 Author(s)

A 25-GHz, 40-mW power amplifier with SO-Omega input and output matching circuit in standard 90-nm Si-CMOS technology is reported. The supply voltage of 3.3 V is compatible with that of conventional wireless communication systems. To enable this, a stacked cascode configuration with a Vdd = 1.2 V transistor and a Vdd = 3.3 V thick oxide transistor for digital I/O interfaces is used. The power amplifier with the total gate width of 640 mum achieves a linear gain of S dB and single-ended output power of more than 16 dBm. The chip size is 1.0 times 0.85 mm2.

Published in:

Microwave Conference, 2007. KJMW 2007. Korea-Japan

Date of Conference:

15-16 Nov. 2007